Simulation of tunneling in the quantum tomography approach
نویسندگان
چکیده
The new method for the simulation of nonstationary quantum processes is proposed. The method is based on the tomography representation of quantum mechanics, i.e., the state of the system is described by the nonnegative function (quantum tomogram). In the framework of the method one uses the ensemble of trajectories in the tomographic space to represent evolution of the system (therefore direct calculation of the quantum tomogram is avoided). To illustrate the method we consider the problem of nonstationary tunneling of a wave packet. Different characteristics of tunneling, such as tunneling time, evolution of spatial and momentum distributions, tunneling probability are calculated in the quantum tomography approach. Tunneling of a wave packet of composite particle, exciton, is also considered; exciton ionization due to the scattering on the barrier is analyzed.
منابع مشابه
Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...
متن کاملModeling and Simulation of a Molecular Single-Electron Transistor
In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...
متن کاملQUANTUM TUNNELING IN MEDIUMS WITH LINEAR AND NONLINEAR DISSIPATION
We have applied the method of integration of the Heisenberg equation of motion proposed by Bender and Dunne, and M. Kamella and M. Razavy to the potential V(q) = v q - µ q with linear and nonlinear dissipation. We concentrate our calculations on the evolution of basis set of Weyl Ordered Operators and calculate the mean position , velocity , the commutation relation [q, p], and the energ...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کامل